Journal
SCIENTIFIC REPORTS
Volume 5, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep18157
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Funding
- ARO grant [W911NF-13-1-0428]
- Science Alliance JDRD grant [U013960010]
- NSF TNSCORE grant [EPS-1004083, CNMS2013-284, CNMS2014-327]
- DOE-Nuclear Energy University Program [DE-NE0000693]
- U.S. Department of Energy [DE-AC05-00OR22725]
- Lab oratory Directed Research and Development Program at ORNL
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Here we report that ternary metal oxides of type (Me)(2)O-3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 x 10(4) S/m) and Hall mobility (>30 cm(2)/V-s). These films had an amorphous microstructure which was stable to at least 500 degrees C and large optical transparency with a direct band gap of 2.85 +/- 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.
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