Journal
SCIENTIFIC REPORTS
Volume 5, Issue -, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/srep17980
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Funding
- National Natural Science Foundation [11374373]
- Doctoral Fund of Ministry of Education of China [20120162110020]
- Natural Science Foundation of Hunan Province of China [13JJ2004]
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We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice strain. During their stretchable regime, they all exhibit metal-indirect gap semiconductor-direct gap semiconductor-topological insulator (TI) transitions with increasing strain from negative (compressive) to positive (tensile) values. The topological phase transition results from the band inversion at the Gamma point which is due to the evolution of bonding and anti-bonding states under lattice strain.
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