Journal
SCIENTIFIC REPORTS
Volume 5, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep18264
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Funding
- US National Science Foundation [ECCS-1124714, CCF-1216614]
- Division of Computing and Communication Foundations
- Direct For Computer & Info Scie & Enginr [1216614] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1124714] Funding Source: National Science Foundation
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We report reversible strain-induced magnetization switching between two stable/metastable states in similar to 300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state. The two states can encode the two binary bits, and, using the right voltage polarity, one can write either bit deterministically. This portends an ultra-energy-efficient non-volatile non-toggle memory.
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