Journal
SEMICONDUCTORS
Volume 48, Issue 10, Pages 1363-1369Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063782614100212
Keywords
-
Categories
Ask authors/readers for more resources
An injection photodiode with a high room-temperature rectification factor (10(5)) is developed based on a p-Si-n -CdS-n(+)-CdS structure. It is shown that the light and dark current voltage characteristics of the structure have identical features. It is found that the mode of long diodes is implemented in the structure at current densities of I = 10(-2)-5 x 10(-4) A/cm(2); in this case, the integral (S-int) and spectral (S-lambda) sensitivities sharply increase. It is shown that S-int = 2.8 x 104 A/lm (3 x 10(6) A/W) for an illuminance of E = 0.1 lux and S 2.3 x 10(4) A/W under laser irradiation with lambda = 625 nm and a power of P= 10 mu W/cm(2) at a bias voltage of V= 20 V. It is shown that the mechanism of photocurrent amplification is predominantly associated with ambipolar carrier-mobility modulation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available