Injection photodiode based on an n-CdS/p-CdTe heterostructure

The possibility of developing injection photodiodes with a tunable/reconfigurable? photosensitivity spectrum in the spectral range of 500-800 nm based on an n-CdS/p-CdTe heterostructure is shown. It is established that such a structure in the short-wavelength region lambda = 500 nm has the highest spectral sensitivity S (lambda) a parts per thousand 3 A/W in the forward direction at a bias voltage of V = +120 mV and S (lambda) a parts per thousand 2 A/W in the reverse direction at a bias voltage of V = -120 mV. The integrated sensitivity of the device is S (int) = 2 400 A/lm under illumination with white light E = 3 x 10(-2) lx, at a bias voltage of V = +4.6 V, and temperature of T = 293 K. Upon illumination with the monochromatic light of an LG-75 laser with the wavelength lambda = 625 nm, S (int) = -1400 A/W (illumination power P = 18 x 10(-6) W/cm(2), bias voltage V = +4.6 V, and temperature T = 293 K). High values of S (lambda) and S (int) provide the highly efficient transformation of light energy into electrical energy at low illumination levels (P < 18 x 10(-6) W/cm(2)).