Journal
SEMICONDUCTORS
Volume 46, Issue 13, Pages 1589-1592Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S106378261213012X
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- Ministry of Education and Science of the Russian Federation under the Federal target program Scientific and Scientific-Pedagogical Personnel of Innovative Russia [14.740.11.0696]
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The electrical conductivity of TiO2 layers heavily doped with vanadium has been measured as a function of temperature in the range 77-300 K. It is shown that, in the case of doping with vanadium, thin epitaxial layers exhibit 3D variable-range hopping conductivity according to Mott's law. The conductivity parameters, i.e., the average hopping energy and distance and the density of states near the Fermi level, are calculated. DOI: 10.1134/S106378261213012X
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