Photoelectric properties of porous GaN/SiC heterostructures

The origin of photoconductivity in porous structures formed by anodization of GaN/SiC heterostructures has been studied. It is shown by comparing the photoelectric, optical, electrical, and structural properties of untreated and anodized heterostructures that this effect is due to the presence of charged states at the interface between GaN and SiC that are specific to the anodization conditions.