Journal
SEMICONDUCTORS
Volume 45, Issue 2, Pages 198-202Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063782611020199
Keywords
-
Categories
Funding
- Russian Foundation for Basic Research [08-02-00888-a]
- Ministry of Education and Science of the Russian Federation [2.1.1/617]
- Russian Academy of Sciences
- US Civilian Research and Development Foundation [Y5-P-01-07]
- Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools [MK-7694.2010.2]
Ask authors/readers for more resources
The effect of variations in the strained Si layer thicknesses, measurement temperature, and optical excitation power on the width of the photoluminescence line produced by self-assembled Ge(Si) nanoislands, which are grown on relaxed SiGe/Si(001) buffer layers and arranged between strained Si layers, is studied. It is shown that the width of the photoluminescence line related to the Ge(Si) islands can be decreased or increased by varying the thickness of strained Si layers lying above and under the islands. A decrease in the width of the photoluminescence line of the Ge(Si) islands to widths comparable with the width of the photoluminescence line of quantum dot (QD) structures based on direct-gap InAs/GaAs semiconductors is attained with consideration of diffusive smearing of the strained Si layer lying above the islands.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available