Injection photodiodes based on low-resistivity ZnS single crystals

Results of an experimental study of Ni-n-n (+)-In photodiode structures fabricated from a low-resistivity ZnS:Al crystal (n (+)-region) are reported. The high-resistivity compensated n-type layer is produced by thermal diffusion of silver. The photodiodes exhibit an injection amplification of the photocurrent under a forward bias of 1-10 V. The dependence of the currents through the diodes on the thickness of the n-type layer in the dark and under UV irradiation is determined. The photosensitivity is at a maximum in the fundamental absorption range in a narrow spectral band.