Journal
SEMICONDUCTORS
Volume 42, Issue 8, Pages 880-904Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782608080034
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Funding
- Russian Foundation for Basic Research [07-02-00549, 05-02-17341, 07-02-00315, 06-02-90082-NNF-a]
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The present-day situation in studies of localized and resonance impurity states in quantum-dimensional structures and stressed semiconductors is discussed. Resonance optical transitions caused by interaction with optical phonons are also considered. Various methods for calculating the characteristics of both donor and acceptor resonance and localized states are analyzed; a large body of experimental data is reported and discussed.
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