Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 33, Issue 9, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/aad8d1
Keywords
beta-Ga2O3; ion irradiation; photoluminescence; radiation defect
Categories
Funding
- Science Challenge Project [TZ2018004]
- National Natural Science Foundation of China [11775061, 11205038]
- 111 Project [B18017]
- Chinese Scholarship Council [201706125070]
- Alexander-von-Humboldt foundation
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In- the present work, we report the 25 MeV oxygen irradiation effects in n-type single crystal beta-Ga2O3 at different fluences. We demonstrate that the symmetric stretching modes and bending vibrations of GaO4 and GaO6 units are impaired upon increasing O irradiation fluence. Blue and green photoluminescence (PL) emission bands are found to be mainly associated with gallium- oxygen divacancies, gallium vacancies and oxygen interstitials. The increase of optically active centers at low fluence and the PL quenching at high fluence are ascribed to the reduction of carrier density and the production of non-radiative recombination centers, respectively. The results envisage the possibility of obtaining pre-designed spectral behaviors by varying the oxygen irradiation fluence.
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