Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 29, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/29/7/075004
Keywords
AlGaN; GaN; ammonothermal growth; HEMT; Schottky diode
Categories
Funding
- PolHEMT Project under the Applied Research Programme of the National Centre for Research and Development [PBS1/A3/9/2012]
- JU ENIAC Project LAST POWER Large Area silicon carbide Substrates and Heteroepitaxial GaN for POWER [120218]
- JU ENIAC Project MERCURE Micro and Nano Technologies Based on Wide Band Gap Materials for Future Transmitting Receiving and Sensing Systems [120220]
- NANOTEC Project 'Nanostructured materials and RF-MEMS RFIC/MMIC technologies for highly adaptive and reliable RF systems' [288531]
- Lithuanian Science Council [MIP-064/2012]
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The work shows a successful fabrication of AlGaN/GaN high electron mobility transistor (HEMT) structures on the bulk GaN substrate grown by ammonothermal method providing an ultralow dislocation density of 10(4) cm(-2) and wafers of size up to 2 inches in diameter. The AlGaN layers grown by metalorganic chemical vapor phase epitaxy method demonstrate atomically smooth surface, flat interfaces with reproduced low dislocation density as in the substrate. The test electronic devices-Schottky diodes and transistors-were designed without surface passivation and were successfully fabricated using mask-less laser-based photolithography procedures. The Schottky barrier devices demonstrate exceptionally low reverse currents smaller by a few orders of magnitude in comparison to the Schottky diodes made of AlGaN/GaN HEMT on sapphire substrate.
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