Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 29, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/29/12/125014
Keywords
hafnium oxide; thin film; dielectric constant
Categories
Funding
- Australian Research Council
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Amorphous hafnium oxide films, energetically deposited at room temperature from a filtered cathodic vacuum arc (FCVA) onto Si substrates, exhibit low current leakage (11 mu A cm(-2) in an electric field of 100 kV cm(-1)), a dielectric constant (k) of 17 and a refractive index exceeding 2.1 over the visible spectrum. Cross-sectional transmission electron microscopy, energy-dispersive x-ray spectroscopy and electron energy loss spectroscopy revealed an amorphous microstructure and higher film density when compared with HfO2 deposited by reactive direct-current magnetron sputtering. The superior properties and higher density of the FCVA HfO2 are attributed to the elevated energy of the depositing flux.
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