Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 29, Issue 9, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/29/9/095019
Keywords
oxide semiconductor; solution process; thin-film transistor
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Funding
- Ministry of Knowledge Economy (MKE) of the Korean Government [10041808]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10041808] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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An ultraviolet (UV)-assisted thermal annealing (TA) method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs). Conventional thermal treatment of zinc hydroxide solution, which was carried out at 150 degrees C for 60 min in air, produced ZnO materials. Electrical properties of the TFTs employing thermally-annealed ZnO films were reproduced in the transistors fabricated using a simultaneous thermal treatment combined with UV irradiation at 150 degrees C for 3 min in air. These results demonstrate that the UV-assisted TA method can expedite the decomposition of precursor materials, contributing to rapid crystallization into thin films.
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