Self-assembled homojunction In2O3 transparent thin-film transistors

Homojunction transparent thin-film In2O3 transistors were fabricated at room temperature. Self-assembled In2O3 source-channel-drain structures were grown by pulsed electron beam deposition using a shadow mask with a 300 mu m diameter wire as an obstacle placed at similar to 100 mu m distance from the substrate for growing the channel region behind it. The film resistivity varies from similar to 7 x 10(8) Omega cm in the channel region to similar to 10(-3) Omega cm in the source-drain regions. We explain this fact by the relative depletion of the indium incorporated in the channel region of the film due to the reduced flux of ablated species arriving on the substrate behind the obstacle, leading to a relative enrichment in oxygen compared to the source and drain regions. The gate insulator is a Y2O3 film grown by RF magnetron sputtering. The transistor operates in enhanced mode. The subthreshold swing is similar to 0.26 V/decade with an on/off current ratio of 1.5 x 10(7), and the saturation channel mobility is greater than 45 cm(2) V-1 s(-1).