Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 28, Issue 9, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/28/9/094006
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Funding
- Engineering and Physical Sciences Research Council [EP/H019324/1, EP/G042330/1, EP/I012591/1] Funding Source: researchfish
- EPSRC [EP/H019324/1, EP/G042330/1, EP/I012591/1] Funding Source: UKRI
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A critical element for the successful growth of GaN device layers on Si is accurate control of the AlGaN buffer layers used to manage strain. Here we present a method for measuring the composition of the AlGaN buffer layers in device structures which makes use of a one-dimensional x-ray detector to provide efficient measurement of a reciprocal space map which covers the full compositional range from AlN to GaN. Combining this with a suitable x-ray reflection with low strain sensitivity it is possible to accurately determine the Al fraction of the buffer layers independent of their relaxation state.
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