Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 27, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/27/7/074011
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Funding
- European Union [POIG.01.01.02-00-008/08]
- National Science Center of Poland [1669/B/H03/2011/40, 2011/01/B/ST4/00959]
- European Community under EC [227012]
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The paper presents results for zinc oxide films grown at low-temperature regime by atomic layer deposition (ALD). We discuss electrical properties of such films and show that low-temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For the optimized ALD process it can reach the level of 10(15) cm(-3), while the mobility of electrons is between 20 and 50 cm(2) V-1 s(-1). Electrical parameters of ZnO films deposited by ALD at low-temperature regime are appropriate for constructing the ZnO-based p-n and Schottky junctions. We demonstrate that such junctions are characterized by a rectification ratio high enough to fulfill requirements of 3D memories and are deposited at temperature 100 degrees C which makes them appropriate for deposition on organic substrates.
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