Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 27, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/27/2/024004
Keywords
-
Ask authors/readers for more resources
Heteroepitaxial nonpolar and semipolar III-nitride films contain numerous structural defects which prevent their use for the development of efficient optoelectronic devices. After a description of the microstructure of such films, this paper reviews the different techniques which have been developed to reduce the densities of the different types of defects. The choice of a well-adapted substrate is discussed. The effect of the introduction of an interlayer is reported. Then, techniques based on the introduction of a 3D growth stage are evaluated. Finally, the original methods based on the growth on inclined facets are described and assessed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available