Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 27, Issue 12, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/0268-1242/27/12/125001
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This work reports on the dc performance of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) grown on Si (111) substrate and the study of current dispersion in these devices using various widely adopted methods. The MOSHEMTs were fabricated using a very thin (4.2 nm) SiO2 film as the gate insulator and were subsequently passivated with about 30 nm thick Si3N4 layer. For devices with 2.5 mu m long gates and a 4 mu m drain-to-source spacing, the maximum saturation drain current density was 822 mA mm-(1) at + 4 V gate bias and the peak external transconductance was similar to 100 mS mm(-1). Furthermore, the oxide layer successfully suppressed the drain and gate leakage currents with the subthreshold current and the gate diode current levels exceeding by more than three orders of magnitude the levels found in their Schottky gate counterparts. Capacitance-voltage and dynamic current-voltage measurements were carried out to assess the oxide quality as well as the devices' surface properties after passivation. The efficacy of each of these characterization techniques to probe the presence of interface traps and oxide charge in the nitride-based transistors is also discussed.
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