Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 27, Issue 11, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/27/11/115017
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Funding
- Defense Threat Reduction Agency (DTRA) [HDTRA1-07-1-0008, BRBAA08-I-2-0128]
- Nebraska Materials Science and Engineering Center [DMR-0820521]
- Institute for Functional Nanomaterials
- NASA-IDEA-PR
- Nebraska Research Initiative
- DOE [DE-EE0003174]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0820521] Funding Source: National Science Foundation
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The placement of the Gd, Er and Yb 4f states within the GaN valence band has been explored by both experiment and theory. The 4d-4f photoemission resonances for various rare-earth(RE)-doped GaN thin films (RE = Gd, Er, Yb) provide an accurate depiction of the occupied 4f state placement within the GaN. The resonant photoemission show that the major Er and Gd RE 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other RE-doped semiconductors. For Yb, there is a very little resonant enhancement of the valence band of Yb-doped GaN, consistent with a large 4f(14-delta) occupancy. The placement of the RE 4f levels is in qualitative agreement with theoretical expectations.
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