Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 26, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/26/7/075009
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Funding
- Ministry of Education, Science and Technology [2010K000971]
- Gyeonggi Provincial Office, Korea
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Heavily tellurium (Te)-doped GaAs layers with diethyltellurium (DETe) grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The existence of Te-rich microprecipitates might degrade both the electrical and optical properties. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance. A comparative study using both Si and Te doping in the GaAs tunnel junction of GaInP/GaAs tandem solar cells showed a higher efficiency for Te doping. Therefore, the GaAs tunnel junction with Te doping can be considered to improve the device performance of GaAs-based multi-junction solar cells.
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