Related references
Note: Only part of the references are listed.Miniaturized optoelectronic tweezers controlled by GaN micro-pixel light emitting diode arrays
Alicja Zarowna-Dabrowska et al.
OPTICS EXPRESS (2011)
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
Hisashi Masui et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes
Mu-Jen Lai et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2010)
Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes
Zheng Gong et al.
JOURNAL OF APPLIED PHYSICS (2010)
Microstructures produced during the epitaxial growth of InGaN alloys
G. B. Stringfellow
JOURNAL OF CRYSTAL GROWTH (2010)
Multi-site optical excitation using ChR2 and micro-LED array
Nir Grossman et al.
JOURNAL OF NEURAL ENGINEERING (2010)
Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology
Zhao Jun Liu et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2009)
Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells
Jae-Hyun Ryou et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2009)
Electrophysiology in the age of light
Massimo Scanziani et al.
NATURE (2009)
Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output
Z. Gong et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer
Jin-Woo Ju et al.
JOURNAL OF APPLIED PHYSICS (2007)
Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures
Philip T. Barletta et al.
APPLIED PHYSICS LETTERS (2007)
Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer
N. Otsuji et al.
JOURNAL OF APPLIED PHYSICS (2006)
Orange-red light-emitting diodes based on a prestrained InGaN-GaN quantum-well epitaxy structure
Horng-Shyang Chen et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2006)
Massively parallel manipulation of single cells and microparticles using optical images
PY Chiou et al.
NATURE (2005)
High-resolution 128 x 96 nitride microdisplay
HW Choi et al.
IEEE ELECTRON DEVICE LETTERS (2004)
Band parameters for nitrogen-containing semiconductors
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2003)
Composition dependence of polarization fields in GaInN/GaN quantum wells
A Hangleiter et al.
APPLIED PHYSICS LETTERS (2003)
High-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes
CH Chen et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2003)
III-nitride blue microdisplays
HX Jiang et al.
APPLIED PHYSICS LETTERS (2001)
Modeling of GaN optoelectronic devices and strain-induced piezoelectric effects
CA Flory et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2001)
Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition
KS Kim et al.
APPLIED PHYSICS LETTERS (2000)