Related references
Note: Only part of the references are listed.High-performance CF4 plasma treated polycrystalline silicon thin-film transistors using a high-k Tb2O3 gate dielectric
Tung-Ming Pan et al.
APPLIED PHYSICS LETTERS (2010)
High-Performance Poly-Silicon TFTs Using a High-k PrTiO3 Gate Dielectric
Tung-Ming Pan et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Dielectric hafnium oxide improved by supercritical carbon dioxide fluid treatment for pentacene thin-film transistors
Po-Tsun Liu et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2008)
High-performance polysilicon TFTs using stacked Pr2O3/oxynitride gate dielectric
Tung-Ming Pan et al.
IEEE ELECTRON DEVICE LETTERS (2008)
CF4-plasma-induced fluorine passivation effects on poly-Si TFTs with high-kappa Pr2O3 gate dielectric
Chia-Wen Chang et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2008)
Influence of oxygen content on the physical and electrical properties of thin yttrium oxide dielectrics deposited by reactive RF sputtering on Si substrates
Tung-Ming Pan et al.
JOURNAL OF ELECTRONIC MATERIALS (2007)
Fast switching liquid crystals for color-sequential LCDs
Sebastian Gauza et al.
JOURNAL OF DISPLAY TECHNOLOGY (2007)
New gate-bias voltage-generating technique with threshold-voltage compensation for on-glass analog circuits in LTPS process
Jung-Sheng Chen et al.
JOURNAL OF DISPLAY TECHNOLOGY (2007)
Characteristics of Pr2O3 gate dielectric thin-film transistors fabricated on fluorine-ion-implanted polysilicon films
Chia-Wen Chang et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2007)
Sensing sensibility of surface micromachined suspended gate polysilicon thin film transistors
H. Mahfoz-Kotb et al.
SENSORS AND ACTUATORS B-CHEMICAL (2006)
High-performance poly-silicon TFTs using HfO2 gate dielectric
Chia-Pin Lin et al.
IEEE ELECTRON DEVICE LETTERS (2006)
Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon
Y Zhao et al.
APPLIED PHYSICS LETTERS (2006)
Field effect detection of biomolecular interactions
P Estrela et al.
ELECTROCHIMICA ACTA (2005)
High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric
BF Hung et al.
IEEE ELECTRON DEVICE LETTERS (2005)
Interfaces and defects of high-K oxides on silicon
J Robertson
SOLID-STATE ELECTRONICS (2005)
CF4 plasma treatment for fabricating high-performance and reliable solid-phase-crystallized poly-Si TFTs
SD Wang et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2005)
Structural and electrical characterizations of yttrium oxide films after postannealing treatments
C Durand et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2005)
Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si
EK Evangelou et al.
JOURNAL OF APPLIED PHYSICS (2003)
Infrared and electrical properties of amorphous sputtered (LaxAl1-x)2O3 films
RAB Devine
JOURNAL OF APPLIED PHYSICS (2003)
Characterization of silicate/Si(001) interfaces
M Copel et al.
APPLIED PHYSICS LETTERS (2002)
A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film
JC Wang et al.
JOURNAL OF APPLIED PHYSICS (2002)
High-κ gate dielectrics:: Current status and materials properties considerations
GD Wilk et al.
JOURNAL OF APPLIED PHYSICS (2001)
Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
HC Lin et al.
IEEE ELECTRON DEVICE LETTERS (2001)
Controllable capacitance-voltage hysteresis width in the aluminum-cerium-dioxide-silicon metal-insulator-semiconductor structure: Application to nonvolatile memory devices without ferroelectrics
L Kim et al.
APPLIED PHYSICS LETTERS (2000)
Submicron super TFTs for 3-D VLSI applications
HM Wang et al.
IEEE ELECTRON DEVICE LETTERS (2000)
Share Paper
