Modulation of 2DEG in AlGaN/GaN heterostructures by P(VDF-TrFE)

A nearly square-like ferroelectric hysteretic loop of spin-coated and crystallized poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) with a remnant polarization 2 Pr of 20 mu C cm(-2) was obtained. The electrical transport properties of the P(VDF-TrFE)/AlGaN/GaN structure were investigated. The results show that the carrier density N-s, mobility mu, and resistivity rho of AlGaN/GaN 2DEG can be directly and strongly modulated by an external electric field via the ferroelectric polymer P(VDF-TrFE): the N-s, mu, and rho of AlGaN/GaN 2DEG exhibit closed hysteretic loops under a closed external electric field and the carrier density can be tuned as large as 235% only by changing the external electric field.