Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 26, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/26/2/025010
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Funding
- National Natural Science Foundation of China [50932002, 10974026]
- Scientific Research Foundation for the Returned Overseas Chinese Scholars of the State Education Ministry of China [A09010301GG-01]
- Special Fund for Basic Scientific Research of Central Colleges of University of Electronic Science and Technology of China (UESTC)
- youth foundation of UESTC
- UESTC
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A nearly square-like ferroelectric hysteretic loop of spin-coated and crystallized poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) with a remnant polarization 2 Pr of 20 mu C cm(-2) was obtained. The electrical transport properties of the P(VDF-TrFE)/AlGaN/GaN structure were investigated. The results show that the carrier density N-s, mobility mu, and resistivity rho of AlGaN/GaN 2DEG can be directly and strongly modulated by an external electric field via the ferroelectric polymer P(VDF-TrFE): the N-s, mu, and rho of AlGaN/GaN 2DEG exhibit closed hysteretic loops under a closed external electric field and the carrier density can be tuned as large as 235% only by changing the external electric field.
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