Related references
Note: Only part of the references are listed.Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures
Engin Arslan et al.
JOURNAL OF APPLIED PHYSICS (2009)
The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates
Engin Arslan et al.
JOURNAL OF APPLIED PHYSICS (2008)
Mechanism of dislocation-governed charge transport in Schottky diodes based on gallium nitride
A. E. Belyaev et al.
SEMICONDUCTORS (2008)
Thermal stability of metal organic vapor phase epitaxy grown AlInN
A. Gadanecz et al.
APPLIED PHYSICS LETTERS (2007)
Growth of blue GaN LED structures on 150-mm Si(111)
A. Dadgar et al.
JOURNAL OF CRYSTAL GROWTH (2006)
High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures
M. Gonschorek et al.
APPLIED PHYSICS LETTERS (2006)
Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications
Hongbo Yu et al.
JOURNAL OF APPLIED PHYSICS (2006)
InAIN/GaN HEMTs:: A first insight into technological optimization
J Kuzmík et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
Analysis of current-voltage characteristics of inhomogeneous Schottky diodes at low temperatures
S Chand et al.
APPLIED SURFACE SCIENCE (2005)
Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se2 heterojunction solar cells
H Bayhan et al.
SOLID-STATE ELECTRONICS (2005)
Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors
DS Katzer et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2005)
Characteristics of InxAl1-xN-GaN high-electron mobility field-effect transistor
O Katz et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2005)
Characterisation of iridium Schottky contacts on n-AlxGa1-xN
V Kumar et al.
ELECTRONICS LETTERS (2003)
Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes
XA Cao et al.
SOLID-STATE ELECTRONICS (2002)
Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity
N Biyikli et al.
APPLIED PHYSICS LETTERS (2002)
The dislocation origin and model of excess tunnel current in GaP p-n structures
VV Evstropov et al.
SEMICONDUCTORS (2000)
Share Paper
