Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 24, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/24/8/085008
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GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 mu m x 350 mu m, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78% when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction.
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