Related references
Note: Only part of the references are listed.Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors
Hiroshi Ishiwara
CURRENT APPLIED PHYSICS (2009)
Basic operation of novel ferroelectric CMOS circuits
M. Takahashi et al.
ELECTRONICS LETTERS (2008)
Optimum ambient N2 pressure during HfAlO pulsed-laser deposition in Pt/SBT/HfAlO/Si field effect transistors
M. Takahashi et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2008)
Large-area pulsed-laser deposition of dielectric and ferroelectric thin films
Shigeki Sakai et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2007)
Characterization of Pt/SrBi2Ta2O9/Hf-Al-O/Si field-effect transistors at elevated temperatures
Qiu-Hong Li et al.
APPLIED PHYSICS LETTERS (2006)
Thirty-day-long data retention in ferroelectric-gate field-effect transistors with HfO2 buffer layers
K Takahashi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
Self-aligned-gate metal/ferroelectric/insulator/semiconductor field-effect transistors with long memory retention
M Takahashi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2005)
Pt/SrBi2Ta2O9/Hf-Al-O/Si field-effect-transistor with long retention using unsaturated ferroelectric polarization switching
S Sakai et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2004)
Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance
S Sakai et al.
IEEE ELECTRON DEVICE LETTERS (2004)
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits
ML Green et al.
JOURNAL OF APPLIED PHYSICS (2001)
Share Paper
