Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 24, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/24/1/015014
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Funding
- European Social Fund
- National Resources Operational Program for Educational and Vocational Training II (EPEAEK II)
- Program PYTHAGORAS
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The optical properties of CuIn1-xGaxSe2 epitaxial single-crystal layers were determined by spectroscopic ellipsometry (SE) and complementary photoreflectance spectroscopy (PR) in dependence of composition. Accurate values of refractive index n and extinction coefficient k and values of the fundamental and higher band-gap energies of quaternary selenides were obtained for six different Ga concentrations: x = 0.08, 0.19, 0.22, 0.50, 0.55, 0.82. In addition, for CuIn1-xGaxSe2 with x = 0.08 and 0.55, variable-angle ellipsometric measurements were performed. Only a very small contribution of the extraordinary component to the measured effective dielectric function was found, which implies that, in chalcopyrite single-crystal layers, the extraordinary component cannot be separated by altering the angle of incidence.
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