Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 23, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/23/8/085016
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Schottky diodes with iridium (Ir) contact electrodes on ZnO films were fabricated and characterized in this work. The Schottky barrier height between Ir and ZnO was determined to be 0.824 +/- 0.04%, 0.837 +/- 0.04% and 0.924 +/- 0.04% eV by the thermionic emission model, the Norde model and capacitance -voltage measurement, respectively. It was also found that the ideality factor of the fabricated ZnO-based Schottky diode was 1.68.
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