Journal
SCRIPTA MATERIALIA
Volume 69, Issue 1, Pages 61-64Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2013.03.007
Keywords
Al19Sb54Se27; Thermal stability; Phase change speed
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Funding
- Foundation Project by Science and Technology Council of Shanghai [1052nm07200]
- National High Technology Development Program of China [2008AA031402]
- Scientific Research Fund Project of Jiangsu University of Technology [KYY12020]
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In comparison to Sb2Se, Al19Sb54Se27 has a higher crystallization temperature, larger crystallization activation energy, better data retention and a wider energy band gap. X-ray diffractometry and X-ray photoelectron spectroscopy were employed to study the crystalline structure and chemical bonding state, respectively, of the elements in Al19Sb54Se27. The picosecond laser technique was used to measure the phase-change time of Al19Sb54Se27. Phase-change memory devices based on Al19Sb54Se27 thin films were fabricated to test and evaluate their electrical properties. (c) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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