Journal
SCRIPTA MATERIALIA
Volume 65, Issue 4, Pages 327-330Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2011.04.033
Keywords
Phase change memory; GeTeN film; Power consumption; Data retention
Categories
Funding
- National Integrated Circuit Research Program of China [2009ZX02023-003]
- National Basic Research Program of China [2007CB935400, 2010CB934300, 2011CB309602, 2011CB932800]
- National Natural Science Foundation of China [60906004, 60906003, 61006087, 61076121]
- Science and Technology Council of Shanghai [09QH1402600, 1052nm07000]
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The crystallization temperature of GeTe film increases markedly from 187 to 372 degrees C as a result of 9.81 at.% nitrogen doping, and a rhombohedral-rocksalt phase transition is observed in both GeTe and nitrogen-doped GeTe (GeTeN) films. Up to 10(5) cycles of endurance for phase change memory (PCM) cells based on GeTeN have been achieved. Extrafine data retention (10 years at 241 degrees C) and relatively low power consumption suggest GeTeN as a promising alternative material to improve the performance of PCM. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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