Buffering effect on physical properties of transparent BaTiO3 capacitors on composite transparent electrodes

Highly transparent BaTiO3 thin films were prepared on 3 nm thick LaNiO3-buffered (222)-oriented Zr-doped In2O3 (180 nm)/ZnO (100 nm)/glass substrates by radiofrequency magnetron sputtering at 500-700 degrees C. All the multilayered films exhibited excellent optical transmittance of similar to 75% in the visible light region. The growth of the BaTiO3 film with a LaNiO3 buffer promotes the appearance of (00l)-crystallographic features. The dielectric constant of the BaTiO3 thin films increased, and the leakage current decreased with the buffering of LaNiO3. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.