CMOS-MEMS integration today and tomorrow

The integration of complementary metal oxide semiconductor (CMOS) and microelectromechanical systems (MEMS) can improve the performance of the M EMS, allows for smaller packages and leads to a lower packaging and instrumentation cost. Polycrystalline silicon-germanium (poly-SiGe) has already shown its potential for integrating MEMS and CMOS in a MEMS-last approach. The current state-of-the-art for poly-SiGe MEMS integration and the needs for the future will be addressed in this article. Market trends are translated into a roadmap for MEMS integration. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.