Journal
SCIENTIFIC REPORTS
Volume 5, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep10428
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Funding
- Funding Program for Next Generation World-Leading Researchers (NEXT Program) [GR035]
- New Energy and Industrial Technology Development Organization (NEDO) under Ministry of Economy, Trade and Industry (METI)
- Element Strategy Initiative to Form Core Research Center
- Ministry of Education, Culture, Sports, Science and Technology (MEXT)
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Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure, but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In this work, carrier polarity conversion to n-type was achieved by isovalent ion substitution for polycrystalline SnS thin films on glass substrates. Substituting Pb2+ for Sn2+ converted the majority carrier from hole to electron, and the free electron density ranged from 10(12) to 10(15) cm(-3) with the largest electron mobility of 7.0 cm(2)/(Vs). The n-type conduction was confirmed further by the position of the Fermi level (EF) based on photoemission spectroscopy and electrical characteristics of pn heterojunctions. Density functional theory calculations reveal that the Pb substitution invokes a geometrical size effect that enlarges the interlayer distance and subsequently reduces the formation energies of Sn and Pb interstitials, which results in the electron doping.
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