Related references
Note: Only part of the references are listed.Polymer-Based Resistive Memory Materials and Devices
Wen-Peng Lin et al.
ADVANCED MATERIALS (2014)
Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory
Stefano Ambrogio et al.
ADVANCED MATERIALS (2014)
Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM
Jeonghwan Song et al.
IEEE ELECTRON DEVICE LETTERS (2014)
Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories
Marc Bocquet et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
F. Pan et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2014)
A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope
Mario Lanza
MATERIALS (2014)
Resistance switching in oxides with inhomogeneous conductivity
Shang Da-Shan et al.
CHINESE PHYSICS B (2013)
Development of a Semiempirical Compact Model for DC/AC Cell Operation of HfOX-Based ReRAMs
Jinwoo Noh et al.
IEEE ELECTRON DEVICE LETTERS (2013)
A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown
Shibing Long et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices
Shibing Long et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
Tian-Jian Chu et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology
Xiaoyi Yang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2013)
Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Geometric optimization of electrostatic fields for stable levitation of metallic materials
Hu Liang et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2013)
AC ageing characteristics of Co-doped ZnO varistors
Tu YouPing et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2013)
A model for Nanosecond Pulsed Dielectric Barrier Discharge (NSDBD) actuator and its investigation on the mechanisms of separation control over an airfoil
Chen ZhenLi et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2013)
Theoretical analysis and simulation of thermoelastic deformation of bimorph microbeams
Shang YuanFang et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2013)
Research on the control method for voltage-current source hybrid-HVDC system
Guo ChunYi et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2013)
A compact neural recording interface based on silicon microelectrode
Han JianQiang et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2013)
Single event upset sensitivity of 45 nm FDSOI and SOI FinFET SRAM
Tang Du et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2013)
Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices
M. G. Cao et al.
APPLIED PHYSICS LETTERS (2012)
Improving the electrical performance of resistive switching memory using doping technology
Wang Yan et al.
CHINESE SCIENCE BULLETIN (2012)
Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress
Wun-Cheng Luo et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM-Part I: Experimental Study
Federico Nardi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology
Ximeng Guan et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
Feng PAN et al.
Progress in Natural Science-Materials International (2012)
Effect of high temperature annealing on the performance of MANOS charge trapping memory
Jin Lin et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2012)
Analyzing trap generation in silicon-nanocrystal memory devices using capacitance and current measurement
Yang XiaoNan et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2012)
Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device
Hongwei Xie et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Scaffolds for central nervous system tissue engineering
Jin He et al.
FRONTIERS OF MATERIALS SCIENCE (2012)
An overview of resistive random access memory devices
Li YingTao et al.
CHINESE SCIENCE BULLETIN (2011)
A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors
B. Chen et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Improved Resistive Switching Uniformity in Cu/HfO2/Pt Devices by Using Current Sweeping Mode
Wentai Lian et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Filament diffusion model for simulating reset and retention processes in RRAM
S. Larentis et al.
MICROELECTRONIC ENGINEERING (2011)
In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching
H. J. Wan et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Site-Selective Deposition of Metal Nanoparticles on Aligned WO3 Nanotrees for Super-Hydrophilic Thin Films
Masachika Shibuya et al.
ADVANCED MATERIALS (2009)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Effects of the compliance current on the resistive switching behavior of TiO2 thin films
X. Cao et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2009)
The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy
Lin Yang et al.
APPLIED PHYSICS LETTERS (2009)
Electrode kinetics of Cu-SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
C. Schindler et al.
APPLIED PHYSICS LETTERS (2009)
Impact of Electrode Materials on Resistive-Switching Memory Programming
Ugo Russo et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices
Carlo Cagli et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
Ugo Russo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells
T. Menke et al.
JOURNAL OF APPLIED PHYSICS (2009)
Constant current stress of Ti-doped Ta2O5 on nitrided Si
A. Paskaleva et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2009)
Transition metal oxide thin films for nonvolatile resistive random access memory applications
Dinghua Bao
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN (2009)
Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
K. Kinoshita et al.
APPLIED PHYSICS LETTERS (2008)
Resistive switching memory effect of ZrO2 films with Zr+ implanted
Qi Liu et al.
APPLIED PHYSICS LETTERS (2008)
Improvement of resistive switching in CuxO using new RESET mode
M. Yin et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
Doo Seok Jeong et al.
JOURNAL OF APPLIED PHYSICS (2008)
Resistive switching in transition metal oxides
Akihito Sawa
MATERIALS TODAY (2008)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures
D. S. Shang et al.
PHYSICAL REVIEW B (2006)
Dielectric breakdown mechanisms in gate oxides
S Lombardo et al.
JOURNAL OF APPLIED PHYSICS (2005)
Identification of a determining parameter for resistive switching of TiO2 thin films -: art. no. 262907
C Rohde et al.
APPLIED PHYSICS LETTERS (2005)