Journal
SCIENCE CHINA-TECHNOLOGICAL SCIENCES
Volume 57, Issue 12, Pages 2295-2304Publisher
SCIENCE PRESS
DOI: 10.1007/s11431-014-5718-7
Keywords
resistive random access memory; operation method; voltage sweeping mode; current sweeping mode; constant current stress; constant voltage stress; rectangular pulse mode; triangle pulse mode
Funding
- National Natural Science Foundation of China [61322408, 61221004, 61422407, 61334007, 61474136, 61274091, 61376112, 61306117, 61106119, 61106082]
- National Basic Research Program of China [2011CBA00602]
- National High Technology Research and Development Program of China [2014AA032900, 2013AA030801, 2011AA010401, 2011AA-010402]
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In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), constant current stress (CCS), constant voltage stress (CVS), rectangular pulse mode (RPM), and triangle pulse mode (TPM). Meanwhile, the effects of these measurement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summarized and analyzed.
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