Journal
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
Volume 55, Issue 12, Pages 2316-2325Publisher
SCIENCE PRESS
DOI: 10.1007/s11433-012-4930-3
Keywords
Moore's law; power dissipation; performance gain; variability; HK/MG; strain; novel device architecture
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The continuous downsizing of device has sustained Moore's law in the past 40 years. As the power dissipation becomes more and more serious, a lot of emerging technologies have been adopted in the past decade to solve the short channel effect, leakage and performance degradation problems. In this paper, the emerging scaling technologies and device innovations, including high-k/metal gate, strain, ultra-shallow junction, tri-gate FinFET, extremely thin SOI and silicon nanowire FET will be reviewed and discussed in terms of the potential and challenge for post-Moore era.
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