Journal
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
Volume 53, Issue 5, Pages 828-833Publisher
SCIENCE PRESS
DOI: 10.1007/s11433-010-0179-x
Keywords
carbon-based nanoelectronics; graphene oxide; gate dielectrics
Categories
Funding
- National Natural Science Foundation of China [10874218, 50725209, 60621091]
- Ministry of Science and Technology [2009DFA01290, 2006AA03Z402, 2007AA03Z353, 2007CB936203]
- Chinese Academy of Sciences
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Carbon nanomaterials, including the one-dimensional (1-D) carbon nanotube (CNT) and two-dimensional (2-D) graphene, are heralded as ideal candidates for next generation nanoelectronics. An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide. Here, in analogy to the widespread use of silicon dioxide (SiO2) in silicon microelectronic industry, we report the proof-of-principle use of graphite oxide (GO) as a gate dielectrics for CNT field-effect transistor (FET) via a fast and simple solution-based processing in the ambient condition. The exceptional transistor characteristics, including low operation voltage (2 V), high carrier mobility (950 cm(2)/V-1 s(-1)), and the negligible gate hysteresis, suggest a potential route to the future all-carbon nanoelectronics.
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