Related references
Note: Only part of the references are listed.Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology
Vincent Barral et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Experimental Investigation on the Quasi-Ballistic Transport: Part II-Backscattering Coefficient Extraction and Link With the Mobility
Vincent Barral et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
A graphene field-effect device
Max C. Lemme et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Electronic confinement and coherence in patterned epitaxial graphene
Claire Berger et al.
SCIENCE (2006)
Multiple gate devices: advantages and challenges
T Poiroux et al.
MICROELECTRONIC ENGINEERING (2005)
Bonded planar double-metal-gate NMOS transistors down to 10 nm
M Vinet et al.
IEEE ELECTRON DEVICE LETTERS (2005)
Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices
G Bertrand et al.
SOLID-STATE ELECTRONICS (2004)
Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era
YK Choi et al.
SOLID-STATE ELECTRONICS (2002)
Pi-gate SOI MOSFET
JT Park et al.
IEEE ELECTRON DEVICE LETTERS (2001)
A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets
S Deleonibus et al.
IEEE ELECTRON DEVICE LETTERS (2000)
On the performance limits for Si MOSFET's: A theoretical study
F Assad et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2000)
Share Paper
