4.7 Article

The sorption mechanisms of Th(IV) on attapulgite

Journal

SCIENCE CHINA-CHEMISTRY
Volume 54, Issue 7, Pages 1138-1147

Publisher

SCIENCE PRESS
DOI: 10.1007/s11426-011-4279-x

Keywords

attapulgite; Th(IV); HA; sorption; desorption; surface complexation model

Funding

  1. National Natural Science Foundation of China [20871062, J1030932]
  2. Fundamental Research Funds for the Central Universities [lzujbky-2010-215]
  3. National Synchrotron Radiation Innovation Foundation of Ministry of Education [20090137S]

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The surface properties of intrinsic and activated attapulgite were studied using potentiometric titration. The sorption mechanisms of Th(IV) on intrinsic and activated attapulgite were investigated by employing surface complexation model and FITEQL 3.2 code. The results indicated that the sorption sites of intrinsic attapulgite involved in the sorption process were main ion exchange site (a parts per thousand XNa/K), strong site (a parts per thousand S(s)OH) and weak site (a parts per thousand S(w)OH), while only strong site (a parts per thousand S(s)OH) and weak site (a parts per thousand S(w)OH) were predominant for activated attapulgite. At pH < 2.5, the species of Th(IV) was main Th(4+) in aqueous solution; then the hydrolysis species of Th(IV) (i.e., Th(OH) (2) (2+) , Th(OH) (3) (+) and Th(OH) (4) (0) ) gradually formed as pH increasing. For the sorption of Th(IV) on intrinsic attapulgite, both ion exchange species (a parts per thousand X(2)Th) and inner-sphere surface complexes (a parts per thousand S(s)OTh) were dominant, while only inner-sphere surface complexes (i.e.,a parts per thousand S(s)OThOH anda parts per thousand S(w)OTh) were observed for Th(IV) sorption to activated attapulgite. In the presence of humic acid (HA), the sorption of Th(IV) on activated attapulgite was obviously enhanced; and botha parts per thousand S(s)OH-HA-Th anda parts per thousand S(s)OTh were the predominant speciation. It was also interesting to find that the addition of HA obviously provoked the desorption behavior of Th(IV).

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