Journal
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
Volume 15, Issue 1, Pages -Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1088/1468-6996/15/1/014601
Keywords
Electro-absorption; Franz-Keldysh effect; quantum-confined Stark effect; GeSi; multiple quantum wells; optical modulator
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Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz-Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the current state of knowledge and the on-going challenges concerning the development of high performance GeSi electro-absorption modulators. We also provide feasible future prospects concerning this research topic.
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