Journal
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
Volume 9, Issue 4, Pages -Publisher
NATL INST MATERIALS SCIENCE
DOI: 10.1088/1468-6996/9/4/044205
Keywords
boron-doped SiC; hexagonal and cubic SiC; type-I superconductor
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The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.
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