Journal
SCIENCE
Volume 344, Issue 6191, Pages 1489-1492Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1250140
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Funding
- Kavli Institute at Cornell for Nanoscale Science
- Cornell Center for Materials Research [National Science Foundation (NSF)] [DMR-1120296]
- Air Force Office of Scientific Research [FA9550-10-1-0410]
- Nano-Material Technology Development Program through the National Research Foundation of Korea - Ministry of Science, ICT and Future Planning [2012M3A7B4049887]
- NSF [ECCS-0335765]
- NSF Integrative Graduate Education and Research Traineeship program [DGE-0654193]
- NSF Graduate Research Fellowship Program [DGE-1144153]
- National Research Foundation of Korea [2012M3A7B4049887] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Electrons in two-dimensional crystals with a honeycomb lattice structure possess a valley degree of freedom (DOF) in addition to charge and spin. These systems are predicted to exhibit an anomalous Hall effect whose sign depends on the valley index. Here, we report the observation of this so-called valley Hall effect (VHE). Monolayer MoS2 transistors are illuminated with circularly polarized light, which preferentially excites electrons into a specific valley, causing a finite anomalous Hall voltage whose sign is controlled by the helicity of the light. No anomalous Hall effect is observed in bilayer devices, which have crystal inversion symmetry. Our observation of the VHE opens up new possibilities for using the valley DOF as an information carrier in next-generation electronics and optoelectronics.
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