Journal
SCIENCE
Volume 343, Issue 6167, Pages 163-167Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1246137
Keywords
-
Categories
Funding
- NSF [ECCS-1231808]
- Defense Advanced Research Projects Agency
- National Secretariat of Higher Education, Science, Technology and Innovation of Ecuador (SENESCYT)
- Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy
- Office of Basic Energy Sciences, Division of Materials and Engineering Sciences, U.S. Department of Energy [DE-AC04-94AL85000]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1231808] Funding Source: National Science Foundation
Ask authors/readers for more resources
By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-layer, in-plane heterostructure of a prototypical material system-graphene and hexagonal boron nitride (h-BN). Monolayer crystalline h-BN grew from fresh edges of monolayer graphene with atomic lattice coherence, forming an abrupt one-dimensional interface, or boundary. More important, the h-BN lattice orientation is solely determined by the graphene, forgoing configurations favored by the supporting copper substrate.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available