Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor

In this paper we present atomic layer deposition (ALD) of zinc nitride thin films using diethylzinc (DEZ) and ammonia (NH3). Density Functional Theory (DFT) is used to calculate the atomistic reaction pathway. The self-limiting growth characteristic is verified at 315 degrees C. Saturated growth rate is found to be 0.9 angstrom per ALD cycle. The as deposited films are found to be polycrystalline with preferential orientation in the {321} direction. The performance of the material is further investigated as channel layer in thin film transistor TFT) applications.