Journal
SCIENCE
Volume 342, Issue 6159, Pages 720-723Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1243879
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Funding
- W. M. Keck Foundation
- Office of Naval Research (ONR)
- South West Academy of Nanolectronics of the Nanoelectronics Research Initiative
- Center for Re-Defining Photovoltaic Efficiency through Molecular-Scale Control, an Energy Frontier Research Center
- U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences [DE-SC0001085]
- National Science Foundation (NSF) [DMR-1124894]
- ONR [N000141310662]
- Agency for Science, Technology And Research (A*STAR), Singapore
- Office of Basic Energy Sciences, Division of Materials and Engineering Sciences, U.S. DOE [DE-AC04-94AL85000]
- NSF's Chemical, Bioengineering, Environmental, and Transport Systems Division
- NSF [OCI-1053575, OCI-0959097, DMR-1122603]
- DOE [DE-AC02-05CH11231]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1124894] Funding Source: National Science Foundation
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The growth of high-quality single crystals of graphene by chemical vapor deposition on copper (Cu) has not always achieved control over domain size and morphology, and the results vary from lab to lab under presumably similar growth conditions. We discovered that oxygen (O) on the Cu surface substantially decreased the graphene nucleation density by passivating Cu surface active sites. Control of surface O enabled repeatable growth of centimeter-scale single-crystal graphene domains. Oxygen also accelerated graphene domain growth and shifted the growth kinetics from edge-attachment-limited to diffusion-limited. Correspondingly, the compact graphene domain shapes became dendritic. The electrical quality of the graphene films was equivalent to that of mechanically exfoliated graphene, in spite of being grown in the presence of O.
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