Journal
RSC ADVANCES
Volume 5, Issue 13, Pages 9819-9827Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4ra14280b
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- National Science Council of the Republic of China, Taiwan [NSC 103-2113-M-269-001]
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Stable and high photoluminescence quantum-yield CdSe/CdS core-shell quantum dots (QDs) with a zinc blende (ZB) structure in both the core and the shell are prepared by over-coating CdSe core nanocrystals with a controlled number of CdS monolayers (MLs). The epitaxial growth reaction is induced via the temperature cycling of a single-source precursor, namely cadmium diethyldithiocarbamate (Cd(DEDTC)(2)), in oleylamine (OLA) and 1-octadecene (ODE) at temperatures between 140 and 200 degrees C. The quantum yield of the resulting core-shell quantum dots is then enhanced by means of a ligand exchange process with alkanethiol. The ligand-protected CdSe/CdS core-shell QDs are spin coated on an indium tin oxide (ITO)-glass substrate to form a type-I QD light-emitting device (QD-LED). It is shown that the QD-LED has a current efficiency of 0.22 cd A(-1). Notably, the current efficiency is 4.5 times higher than that of a QD-LED incorporating non-thiol-protected QDs, and is comparable to the best reported performance for type-I QD-LED devices in the literature.
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