4.8 Article

A Physically Transient Form of Silicon Electronics

Journal

SCIENCE
Volume 337, Issue 6102, Pages 1640-1644

Publisher

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1226325

Keywords

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Funding

  1. Defense Advanced Research Projects Agency
  2. NSF INSPIRE
  3. Air Force Office of Scientific Research Multi University Research Initiative program
  4. National Institutes of Health [EB002520]
  5. U.S. Department of Energy
  6. Division Of Materials Research
  7. Direct For Mathematical & Physical Scien [1242240] Funding Source: National Science Foundation

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A remarkable feature of modern silicon electronics is its ability to remain physically invariant, almost indefinitely for practical purposes. Although this characteristic is a hallmark of applications of integrated circuits that exist today, there might be opportunities for systems that offer the opposite behavior, such as implantable devices that function for medically useful time frames but then completely disappear via resorption by the body. We report a set of materials, manufacturing schemes, device components, and theoretical design tools for a silicon-based complementary metal oxide semiconductor (CMOS) technology that has this type of transient behavior, together with integrated sensors, actuators, power supply systems, and wireless control strategies. An implantable transient device that acts as a programmable nonantibiotic bacteriocide provides a system-level example.

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