Related references
Note: Only part of the references are listed.Theory of topological Kondo insulators
Maxim Dzero et al.
PHYSICAL REVIEW B (2012)
Topological insulators and superconductors
Xiao-Liang Qi et al.
REVIEWS OF MODERN PHYSICS (2011)
Dynamical axion field in topological magnetic insulators
Rundong Li et al.
NATURE PHYSICS (2010)
Colloquium: Topological insulators
M. Z. Hasan et al.
REVIEWS OF MODERN PHYSICS (2010)
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
Haijun Zhang et al.
NATURE PHYSICS (2009)
Dynamical mean-field theory of a correlated gap formation in plutonium monochalcogenides
M. -T. Suzuki et al.
PHYSICAL REVIEW B (2009)
Nature of the 5f states in actinide metals
Kevin T. Moore et al.
REVIEWS OF MODERN PHYSICS (2009)
Inducing a Magnetic Monopole with Topological Surface States
Xiao-Liang Qi et al.
SCIENCE (2009)
Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
Liang Fu et al.
PHYSICAL REVIEW LETTERS (2008)
Topological Mott insulators
S. Raghu et al.
PHYSICAL REVIEW LETTERS (2008)
Topological insulators with inversion symmetry
Liang Fu et al.
PHYSICAL REVIEW B (2007)
An orthogonalized valence orbital approximation in relativistic full-potential linear-combination-of-atomic-orbitals methods
Shugo Suzuki et al.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN (2007)
Quantum spin Hall effect and topological phase transition in HgTe quantum wells
B. Andrei Bernevig et al.
SCIENCE (2006)
Photoemission study of the electronic structure of Am, AmN, AmSb, and Am2O3 films -: art. no. 115122
T Gouder et al.
PHYSICAL REVIEW B (2005)
Electronic structure and optical properties of Am monopnictides
DB Ghosh et al.
PHYSICAL REVIEW B (2005)
Structural distortion and magnetism in transition metal oxides: crucial roles of orbital degrees of freedom
Z Fang et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
Maximally localized Wannier functions for entangled energy bands
I Souza et al.
PHYSICAL REVIEW B (2002)
High-pressure resistance of PuTe up to 25 GPa
V Ichas et al.
PHYSICAL REVIEW B (2001)