Journal
SCIENCE
Volume 337, Issue 6092, Pages 324-327Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1221350
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Funding
- Deutsche Forschungsgemeinschaft [SFB 689, WE 247618, FOR 1483]
- Elitennetzwerk Bayern
- European Union within the European Regional Development Fund, through Innovative Economy grant [POIG.01.01.02-00-008/08]
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Spin-transistor designs relying on spin-orbit interaction suffer from low signal levels resulting from low spin-injection efficiency and fast spin decay. Here, we present an alternative approach in which spin information is protected by propagating this information adiabatically. We demonstrate the validity of our approach in a cadmium manganese telluride diluted magnetic semiconductor quantum well structure in which efficient spin transport is observed over device distances of 50 micrometers. The device is turned off by introducing diabatic Landau-Zener transitions that lead to a backscattering of spins, which are controlled by a combination of a helical and a homogeneous magnetic field. In contrast to other spin-transistor designs, we find that our concept is tolerant against disorder.
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